2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGT.
Inchange Semiconductor
D6849 - 2SD6849
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H.
Toshiba
2SD684A - NPN Transistor
: 2SD684A , SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • Hi.
INCHANGE
2SD684 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain- : hFE= 1.
Toshiba
2SD684 - NPN Transistor
2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLIC.
