2SK117 TOSHIBA Field Effect Transistor Silicon N C.
2SK117 - Silicon N-Channel MOSFET
Apm JFET 2SK117 Low Noise Amplifier Applications Silicon N Channel Junction Type *High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.2SK117 - Silicon N-Channel MOSFET
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m.K117 - 2SK117
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m.2SK1170 - Silicon N-Channel MOSFET
2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.2SK1172 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations fo.2SK1171 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for .2SK1170 - Silicon N-Channel MOSFET
2SK1169, 2SK1170 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.2SK1177 - MOSFET
2SK1177 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 2.5 ± 10 (Tch 150ºC) (Ta = 25ºC) External dimens.2SK1178 - MOSFET
2SK1178 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 4.0 ± 16 (Tch 150ºC) (Ta = 25ºC) External dimens.2SK1179 - MOSFET
2SK1179 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 8.5 ± 34 (Tch 150ºC) (Ta = 25ºC) External dimensio.K1170 - 2SK1170
www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe.