2SK117 Datasheet | Specifications & PDF Download

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m

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Apm JFET 2SK117 Low Noise Amplifier Applications Silicon N Channel Junction Type *High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1

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www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe

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2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1178 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 4.0 ± 16 (Tch 150ºC) (Ta = 25ºC) External dimens

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations fo

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2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m

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2SK1177 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 2.5 ± 10 (Tch 150ºC) (Ta = 25ºC) External dimens

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2SK1179 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 8.5 ± 34 (Tch 150ºC) (Ta = 25ºC) External dimensio

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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2SK1169, 2SK1170 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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