Ordering number:EN661E N-Channel Junction Silicon.
ETC
K2128 - 2SK2128
www.DataSheet4U.com Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS =.
Sanyo Semicon Device
2SK212 - N-Channel MOSFET
Ordering number:EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features · Ideal for FM tuners in low-voltage radios, car radios,.
Panasonic Semiconductor
2SK2123 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .
Panasonic Semiconductor
2SK2124 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .
Panasonic Semiconductor
2SK2125 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q.
Panasonic Semiconductor
2SK2126 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .
Panasonic Semiconductor
2SK2128 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q H.
Panasonic Semiconductor
2SK2129 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.
Xiao sheng Elctronic
2SK212 - N-channel MOSFET
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK212 Xiaosheng D Symbol Applications For charge sensor, meter amplifier c.
ETC
K2129 - 2SK2129
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.