2SK2788 Datasheet | Specifications & PDF Download

2SK2788 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive curr

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2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V,

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2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V,

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