2SK303 Datasheet | Specifications & PDF Download

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SMD Type Junction FET N-Channel Junction Silicon FET 2SK303 Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant c

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3031 Silicon N-channel power MOSFET ■ Features Unit: mm • Avalanc

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Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3035 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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UNISONIC TECHNOLOGIES CO., LTD 2SK303 LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS 3 12 SOT-113S  FEATURES * Ideal For Potentiometers * An

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Power F-MOS FETs 2SK3030 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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