2SK303 Datasheet | Specifications & PDF Download

Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (4 votes)

Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (3 votes)

Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

Rating: 1 ★ (3 votes)

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3031 Silicon N-channel power MOSFET ■ Features Unit: mm • Avalanc

Rating: 1 ★ (2 votes)

Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (2 votes)

Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (2 votes)

UNISONIC TECHNOLOGIES CO., LTD 2SK303 LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS 3 12 SOT-113S  FEATURES * Ideal For Potentiometers * An

Rating: 1 ★ (2 votes)

SMD Type Junction FET N-Channel Junction Silicon FET 2SK303 Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant c

Rating: 1 ★ (2 votes)

Rating: 1 ★ (1 votes)

Power F-MOS FETs 2SK3030 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (1 votes)

Power F-MOS FETs 2SK3035 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Rating: 1 ★ (1 votes)