2SK43 Datasheet | Specifications & PDF Download

(47 views)

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

(18 views)

2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25

(13 views)

isc N-Channel MOSFET Transistor 2SK430L FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-R

(12 views)

2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25

(10 views)

Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Pac

(9 views)

(8 views)

w w a D . w S a t e e h U 4 t m o .c w w w a .D S ta e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

(7 views)

2SK435 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK4

(6 views)

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6

(4 views)

isc N-Channel MOSFET Transistor 2SK430S FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-R

(4 views)