3.0HC Datasheet | Specifications & PDF Download

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LITHIUM ION BATTERIES: INDIVIDUAL DATA SHEET CGR17670HC CGR17670HC: Cylindrical Model Discharge Characteristics External Dimensions (mm) *2 17.0

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PRODUCT SPECIFICATION Doc. Number: □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: N140HCA SUFFIX: EAB Cus

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MMBD7000HS /HC DUAL SURFACE MOUNT SWITCHING DIODE Features  Fast Switching Speed  Surface Mount Package Ideally Suited for Automated Insertion  Fo

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Product Summary VRRM 1200
V IF (TC=150°C) 20 A** QC 110 nC** Features  Extremely low reverse current  No reverse recovery current  Temperatur

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PRODUCT SPECIFICATION Doc. Number : □ Tentative Specification □ Preliminary Specification ■Approval Specification MODEL NO.: M230HCJ SUFFIX: L3N Cu

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< High Voltage Insulated Gate Bipolar Transistor：HVIGBT > CM1500HC-90XA HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage In

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B2D40120HC1 SiC Schottky Diode Product Summary VRRM 1200
V IF (TC=150°C) QC 40 A** 240 nC** Features  Extremely low reverse current  No reverse

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LITHIUM ION BATTERIES (INDIVIDUAL DATA SHEETS) CGR17670HC:CylindricalModel Discharge Characteristics Specifications Nominal Voltage Standard Capac

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B2D30120HC1 SiC Schottky Diode Product Summary VRRM 1200
V Package: TO-247-3 IF (TC=155°C) QC 30 A** 178 nC** Features  Extremely low reverse c

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< HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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M28W640HCT M28W640HCB 64 Mbit (4 Mb x 16, boot block) 3 V supply Flash memory Features „ Supply voltage – VDD = 2.7 V to 3.6 V – VPP = 12 V for fast

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www.DataSheet4U.com PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE on. ang

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APT47N60HC3 www.DataSheet4U.com 600V 33.5A 0.080Ω Super Junction MOSFET TO-258 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Cap

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM400HC-24NFM Single IGBT NFM-Series Module 400 Amperes/1200 Volts GH

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HC Series Silicon Epitaxial Planar Zener Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black ST Brand XXX ST Max. 3.9

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWI

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L90H PCB L90H C S DC12V Relay Type: Contact Form: 1C Sealing Type: Nil: Open S: Sealed Coil Voltage:- 6 ~ 48VDC Dimension L * W * H (mm) Features T

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