.
KLM4G1FEPD-B031 - 4GB eMMC
SAMSUNG CONFIDENTIAL Rev. 1.0, Dec. 2014 KLM4G1FEPD-B031 Samsung eMMC Product family eMMC 5.0 Specification compatibility datasheet SAMSUNG ELECTRONIC.H54G56CYRBX247 - 4GB LPDDR4
200ball FBGA Specification 4GB LPDDR4/LPDDR4X This document is a general product description and is subject to change without notice. SK hynix does no.4GBJ608 - 6.0 Amp Glass Passivited Bridge Rectifiers
Elektronische Bauelemente 4GBJ6005 ~ 4GBJ610 Voltage 50V ~ 1000V 6.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product A suffix of “-C” .IS34MW04G088 - 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.8V NAND FLA.H5TQ4G43AFR-xxC - 4Gb DDR3 SDRAM
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the right.H5TQ4G63MFR-xxC - 4Gb DDR3 SDRAM
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83MFR-xxC H5TQ4G83MFR-xxI H5TQ4G83MFR-xxJ H5TQ4G63MFR-xxC H5TQ4G63MFR-xx.NT5CB256M16BP - 4Gb DDR3 SDRAM B-Die
4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature VDD = VDDQ = 1.5V ± 0.075V (.THGBMBG5D1KBAIL - 4GB density e-MMC
THGBMBG5D1KBAIL 4GB THGBMBG5D1KBAIL TOSHIBA e-MMC Module INTRODUCTION THGBMBG5D1KBAIL is 4GB density of e-MMC Module product housed in 153ball BGA.H27UCG8T2ATR-BC - 64Gb(8192M x 8bit) Legacy MLC NAND Flash
H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash F20 64Gb MLC NAND Flash Memory TSOP Legacy This document is a general product descri.H5TQ4G63AFR-xxL - 4Gb DDR3 SDRAM
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83AFR-xxC H5TQ4G83AFR-xxI H5TQ4G83AFR-xxL H5TQ4G83AFR-xxJ H5TQ4G63AFR-xxC.H9TP32A4GDBCPR - 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)
CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK.IS34ML04G081 - 4Gb 3.3V X8 NAND FLASH MEMORY
IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 4Gb(x8) 3.3V NAND FLASH MEMORY with 1b ECC IS34/35ML04G08.IS34MW04G168 - 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.8V NAND FLA.SCB13H4G800AF-11M - 4Gbit DDR3L SDRAM
Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History .SCB13H4G800AF-13K - 4Gbit DDR3L SDRAM
Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History .NT5CC256M16ER - Commercial and Industrial DDR3 4Gb SDRAM
DDR3-4Gb E-Die NT5CB(C)512M8EQ/NT5CB(C)256M16ER Commercial and Industrial DDR3(L) 4Gb SDRAM Features Basis DDR3 Compliant - 8n Prefetch Architect.NT5CC512M8EQ - Commercial and Industrial DDR3 4Gb SDRAM
DDR3-4Gb E-Die NT5CB(C)512M8EQ/NT5CB(C)256M16ER Commercial and Industrial DDR3(L) 4Gb SDRAM Features Basis DDR3 Compliant - 8n Prefetch Architect.H5TQ4G63CFR-xxL - 4Gb DDR3 SDRAM
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83CFR-xxC H5TQ4G83CFR-xxI H5TQ4G83CFR-xxL H5TQ4G83CFR-xxJ H5TQ4G63CFR-xxC.K4B4G0446D - 4Gb D-die DDR3 SDRAM
Rev. 1.2, Jun. 2014 K4B4G0446D K4B4G0846D 4Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RES.MT36VDDT51272 - 4GB DDR SDRAM RDIMM
1GB, 2GB, 4GB (x72, ECC, DR) 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDT12872 – 1GB1 MT36VDDT25672 – 2GB1 MT36VDDT51272 – 4GB For component da.