3.9W Datasheet | Specifications & PDF Download

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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Technical Data Data Sheet N2030, Rev. - B5819WS SCHOTTKY BARRIER DIODE B5819WS SOD-323 Circuit Diagram Features  For use in low voltage, high freq

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Clamp Cylinder : Basic Type / Built-in Standard Magnet Type Magnetic Field Resistant Auto Switch (Band Mounting Style) Series CK1/CKG1 ø40, ø50, ø63

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HT876 10.9W×2   ・ ， ・ ・（PBTL） ・ABD ・THD+N: 0.02%（VDD = 8.4V, RL = 4Ω, fIN = 1kHz, Po = 2×1.0W, BTL） ・(fIN = 1kHz, THD+N = 10%) 2×10.9W (V

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SCHEMATIC DIAGRAM-3 B MAIN CIRCUIT D756 MA700ATA D757 MA700ATA : POSITIVE VOLTAGE LINE : NEGATIVE VOLTAGE LINE 7.6V -10.4V :AUDIO SIGNAL LINE 7.6V

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www.DataSheet4U.com ISSUED DATE :2004/09/24 REVISED DATE : G S B AV 9 9 W Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A

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TB2926CHQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2926CHQ 49 W × 4-ch BTL Audio Power IC The TB2926CHQ is a four-channel BTL p

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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Pb RoHS COMPLIANCE BAV19W - BAV21W 250mW Surface Mount Switching Diode SOD-123 Features — Fast switching speed — Surface mount package ideally suite

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Silicon Planar Zener Diodes MM3Z2V0W THRU MM3Z75W SOD-323 Pinning 1.Cathode 2.Anode FEATURES Total power dissipation: Max. 300mW. 1 Wide zen

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Date:- 03 August 2012 Data Sheet Issue:- K1 Fast Turn-off Thyristor Types P0389WC04# & P0389WC08# Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL

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FTR-K1 SERIES COMPACT POWER TWIN RELAY 1 POLE x 2 - 25A, H-Bridge (for automotive applications) FTR-P4 Series n FEATURES l Compact for high density

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isc N-Channel MOSFET Transistor 2SK3549W FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-R

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Silicon Planar Zener Diodes MM3Z2V0W THRU MM3Z75W SOD-323 Pinning 1.Cathode 2.Anode FEATURES Total power dissipation: Max. 300mW. 1 Wide zen

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Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec

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MCC
     omponents TM 20736 Marilla Street Chatsworth Micro Commercial Components  # $ %

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TGA2595 27.5 – 31 GHz 9 W GaN Power Amplifier Product Description Qorvo’s TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvo’s 0.15 um

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Production specification Surface Mount Switching Diode BAS19W/BAS20W/BAS21W FEATURES  Fast switching speed.  High conductance. Pb Lead-free  Fo

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