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1N5819W Datasheet - Sangdest Microelectronics

1N5819W SCHOTTKY BARRIER DIODE

1N5819W Features

* Metal silicon junction, majority carrier conduction

* Guarding for overvoltage protection

* Low power loss, high efficiency

* High current capability

* Low forward voltage drop

* High surge capability

* For use in low voltage, high frequency

1N5819W Datasheet (125.40 KB)

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Datasheet Details

Part number:

1N5819W

Manufacturer:

SangdeSTMicroelectronics ↗

File Size:

125.40 KB

Description:

Schottky barrier diode.

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1N5819W SCHOTTKY BARRIER DIODE Sangdest Microelectronics

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