1N5819W Features
* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability
* Low forward voltage drop
* High surge capability
* For use in low voltage, high frequency
1N5817W-SangdestMicroelectronics.pdf
Datasheet Details
1N5819W, 1N5817W
SangdeSTMicroelectronics ↗
125.40 KB
Schottky barrier diode.
This datasheet PDF includes multiple part numbers: 1N5819W, 1N5817W.
Please refer to the document for exact specifications by model.
1N5819W Distributor
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