1N5819W, 1N5817W Datasheet - Sangdest Microelectronics

1N5819W SCHOTTKY BARRIER DIODE

1N5819W Features

* Metal silicon junction, majority carrier conduction

* Guarding for overvoltage protection

* Low power loss, high efficiency

* High current capability

* Low forward voltage drop

* High surge capability

* For use in low voltage, high frequency

Datasheet Details

1N5819W, 1N5817W

125.40 KB

Schottky barrier diode.

This datasheet PDF includes multiple part numbers: 1N5819W, 1N5817W.
Please refer to the document for exact specifications by model.

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TAGS

1N5819W Distributor