1N5817W - SCHOTTKY BARRIER DIODE

Sangdest Microelectronics

Datasheet Details

Part number	1N5817W
Manufacturer	SangdeSTMicroelectronics
File Size	125.40 KB
Description	SCHOTTKY BARRIER DIODE
Datasheet	1N5817W-SangdestMicroelectronics.pdf

Metal silicon junction, majority carrier conduction.
Guarding for overvoltage protection.
Low power loss, high efficiency.
High current capability.
Low forward voltage drop.
High surge capability.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

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Published: Jan 26, 2018 |