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1N5817W SCHOTTKY BARRIER DIODE

1N5817W Description

Technical Data Data Sheet N1756, Rev.- 1N5817W-1N5819W SCHOTTKY BARRIER DIODE .

1N5817W Features

* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability
* Low forward voltage drop
* High surge capability
* For use in low voltage, high frequency

1N5817W Applications

* Mechanical Data:
* Case: SOD-123FL molded plastic body
* Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A

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SCHOTTKY BARRIER DIODE Sangdest Microelectronics
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