Part number:
1N5817W
Manufacturer:
SangdeSTMicroelectronics ↗
File Size:
125.40 KB
Description:
Schottky barrier diode.
* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability
* Low forward voltage drop
* High surge capability
* For use in low voltage, high frequency
1N5817W
SangdeSTMicroelectronics ↗
125.40 KB
Schottky barrier diode.
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