1N5817W Datasheet, Diode, Sangdest Microelectronics

1N5817W Features

• Diode
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability

PDF File Details

Part number:

1N5817W

Manufacturer:

SangdeSTMicroelectronics ↗

File Size:

125.40kb

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📄 Datasheet

Description:

Schottky barrier diode.

1N5817W Application

• Applications Mechanical Data:
• Case: SOD-123FL molded plastic body
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2

TAGS

1N5817W

Sangdest Microelectronics

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