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TGA2595 - 27.5 - 31GHz 9W GaN Power Amplifier

Description

Qorvo’s TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvo’s 0.15 um GaN on SiC process.

The balanced configuration supports low return loss and improves robustness into non-ideal loads.

Features

  • PP.
  • arFrortedqNuuoecn. ctyFReaanDgteu:sr2ce7r. si5pttoio3n1 GHz T.
  • GPAO2U5T9: 539 dBm (2P7IN.5= .
  •  2321 GdBHmz )9,WCWGaN Power Amplifier ?.
  • ?PAE: 22 % (PINSa=m2p2l desBm(2),pCcsW. pack) ?.
  • ?Small Signal GEaivna:lu3a0t dioBn Board for TGA2595.
  • Return Loss: 20 dB.
  • IM3 @ 33 dBm/tone:.
  • 30 dBc.
  • IM5 @ 33 dBm/tone:.
  • 35 dBc.
  • Bias: VD = +20 V, IDQ = 280-560 mA, VG ≈.
  • 2.5 V Typical.
  • Chip Dimensions: 3.60 x 3.24 x 0.10 mm Performance is.

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Datasheet preview – TGA2595

Datasheet Details

Part number TGA2595
Manufacturer qorvo
File Size 847.47 KB
Description 27.5 - 31GHz 9W GaN Power Amplifier
Datasheet download datasheet TGA2595 Datasheet
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Full PDF Text Transcription

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TGA2595 27.5 – 31 GHz 9 W GaN Power Amplifier Product Description Qorvo’s TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvo’s 0.15 um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31 GHz, it achieves 9 W saturated output power, power-added efficiency of 22 % and 30 dB small signal gain. Along with excellent linear characteristics, the TGA2595 is ideally suited to support both commercial and defense related satellite communications. To simplify system integration, the TGA2595 is fully matched to 50 Ω with integrated DC blocking caps on both I/O ports. The TGA2595 is 100 % DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.
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