305-S Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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FR301 - FR307-STR PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability

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NF3000C-VQ Series 3 Phase & 3 lines 480VAC Large current up to 150A Application UL1283 (file No.E102708) EN60939-2 (file No.R50031207) Inverter/UP

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect NDT3055L General Description This Logic Level N−Channel enhancement mode power fie

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collecto

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SILICON NPN POWER TRANSISTOR 2N3055 Features: • High Gain At High Current. • Hermetic TO-3 (TO-204AA) Metal Package. • Ideally Suited For General Purp

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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DEVICE S2P.E5CGIFBICPASTILOINMITING AMPLIFIER 2.5 GBPS LIMITING AMPLIFIER FEATURES • 2 GHz Bandwidth • 32dB Gain • Single +5V Power Supply • Fully Dif

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EM83050H KEYBOARD ENCODER ary n i m i l e Pr GENERAL DESCRIPTION The EM83050H microcontroller is dedicated to a keyboard encoder ,specially designed

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3053 DESCRIPTION ·Maximun SOA Curve ·High gain-bandwidth Product

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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz

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2N3054 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetica

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effec

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Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a

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QX5305 Boost LED Constant Current Driver General Description QX5305 is a high efficient boost type LED driver IC. It is especially suited to drive se

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2N3053,A CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage(l) Collector-Ba

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P Channel Enchancement Mode MOSFET 2305 -3.5A DESCRIPTION The 2305 is the P-Channel logic enhancement mode power field effect transistor are produc

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