.
TRinno
TGD30N40P - Field Stop Trench IGBT
TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio.
IXYS
IXFT30N40Q - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID.
IXYS
IXGF30N400 - High Voltage IGBT
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF30N400 VCES = 4000V = 30A IC25 VCE(sat) ≤ 3.1V ISOPLUS i4-P.
Alpha & Omega Semiconductors
D30N40 - AOD30N40
AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET proces.
Trinno
TGD30N40P - IGBT
TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio.
Ascend
ASDM30N40AE - 30V N-Channel MOSFET
Features • Provide Excellent RDS(ON) • Advanced Trench Technology • Low Gate Charge • Lead free product is acquired Application • Load Switch • PWM Ap.
Fairchild Semiconductor
FQA30N40 - 400V N-Channel MOSFET
QFET $ $ $ $ $ $ %&'(&&)*+& ,(Ω-)+,&) . / 0& 1 ./ .
TRinno
TGPF30N40P - Field Stop Trench IGBT
TGPF30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
IXYS
IXFH30N40Q - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID.
