30N40 Datasheet | Specifications & PDF Download

TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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TGPF30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID

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Features • Provide Excellent RDS(ON) • Advanced Trench Technology • Low Gate Charge • Lead free product is acquired Application • Load Switch • PWM Ap

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID

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AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET proces

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) Not For New Designs IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat)

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