IXGF30N400 - High Voltage IGBT
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) Not For New Designs IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat) 3.1V Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C Continuous Transient 4000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms 30 A 15 A 360 A VGE= 20V, TVJ = 125°C, RG = 2 ICM = 300 A Clamped Inductive Load VCE 0.8
IXGF30N400 Features
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V Electrical Isolation
* High Peak Current Capability
* Low Saturation Voltage
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* High Power Density
* Easy to
