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IXGF30N400 High Voltage IGBT

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Description

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) Not For New Designs IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat) .

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Datasheet Specifications

Part number
IXGF30N400
Manufacturer
IXYS
File Size
730.39 KB
Datasheet
IXGF30N400_IXYS.pdf
Description
High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V Electrical Isolation
* High Peak Current Capability
* Low Saturation Voltage
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* High Power Density
* Easy to

Applications

* ( Electrically Isolated Tab) Not For New Designs IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat)  3.1V Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C Continuous Transient 4000 V ± 20 V ± 30 V TC =

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