IXGF20N250 Datasheet (IXYS) - High Voltage IGBT

IXGF20N250, High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF20N250 VCES = 2500V IC25 = 23A VCE(sat) ≤ 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, VGE = 19V, 1ms 10ms VGE= 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mountin

IXGF20N250 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge Pulser Circuits Advantages High Power Density Easy