* Applications Advantages ria l ISOPLUS i4-PakTM V V V 1 2 5 Isolated Tab 5 = Collector 1 = Gate 2 = Emitter Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flam
IXGF25N300 Datasheet (184.92 KB)
IXGF25N300
IXYS Corporation
184.92 KB
High voltage igbt.
High Voltage IGBT
For Capacitor Discharge Applications ( Electrically Isolated Tab)
IXGF25N300
VCES = 3000V IC25 = 27A VCE(sat) ≤ 3.0V
Symbol VCES .
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