CGD65A130S2 (Cambridge GaN Devices)
GaN HEMT
650 V / 130 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense
DECEMBER 2022
www.camgandevices.com Issued 2022-12-23
01
Sy
CGD65A130S2 DATASHEET
Data
(32 views)
.
GaN HEMT
650V N-Channel Super-Junction MOSFET
30 Watt DC/DC Converters
650V N-Channel Super-Junction MOSFET
Diode Rectifier
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES
PHASE CONTROL THYRISTORS
FAST RECOVER DIODE
PHASE CONTROL THYRISTORS
Phase Control Thyristors
HIGH VOLTAGE SCHOTTKY DIODE
Dual power Schottky diode
Small Signal Schottky Barrier diode
Dual power Schottky diode
HIGH VOLTAGE SCHOTTKY DIODE
Dual power Schottky diode
Surface Mount Schottky Barrier Diode
30S2 Distributor