35CN10N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP35CN10N，IIPP35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhance

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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on)

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IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charg

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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on)

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IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate char

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IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate char

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·F

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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on)

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