IPI35CN10N N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI35CN10N *.

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Datasheet Specifications

Part number: IPI35CN10N
Manufacturer: INCHANGE
File Size: 257.06 KB
Datasheet: IPI35CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.035Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage 100 V ±20 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pulsed 108 A PD Total Dissipation @TC=25℃ 58 W Tj Max. Operating Junction Temperature

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IPI35CN10N N-Channel MOSFET INCHANGE

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