IPI35CN10N Datasheet, MOSFET, INCHANGE

IPI35CN10N Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on) ≤0.035Ω
  • Enhancement mode
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPI35CN10N

Manufacturer:

INCHANGE

File Size:

257.06kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPI35CN10N 📥 Download PDF (257.06kb)
Page 2 of IPI35CN10N

IPI35CN10N Application

  • Applications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage 100

TAGS

IPI35CN10N
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IPI35CN10N - Power-Transistor (Infineon)
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charg.

IPI35CN10NG - Power-Transistor (Infineon)
IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate char.

IPI320N20N3 - Power-Transistor (Infineon)
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPI320N20N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.

IPI320N20N3G - Power-Transistor (Infineon)
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPI020N06N - Power Transistor (Infineon Technologies)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

IPI023NE7N3G - Power-Transistor (Infineon)
%&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .

IPI024N06N3 - Power Transistor (Infineon)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPI024N06N3G - Power-Transistor (Infineon Technologies)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPI029N06N - Power Transistor (Infineon Technologies)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts