Datasheet4U.com

IPP35CN10NG - Power-Transistor

Infineon

📥 Download Datasheet

IPP35CN10NG Datasheet Preview — Preview of IPP35CN10NG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IPP35CN10NG
Manufacturer	Infineon ↗
File Size	854.29 KB
Description	Power-Transistor
Datasheet	IPP35CN10NG-Infineon.pdf

IPP35CN10NG Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 IPP35CN10NG Similar Datasheet

IPP015N04N - N-Channel MOSFET (INCHANGE)
IPP020N06N - N-Channel MOSFET (INCHANGE)
IPP023N04N - N-Channel MOSFET (INCHANGE)
IPP023N04NG - Power-Transistor (Infineon Technologies)
IPP023NE7N3 - N-Channel MOSFET (INCHANGE)
IPP024N06N3 - N-Channel MOSFET (INCHANGE)
IPP024N06N3G - Power-Transistor (Infineon Technologies)
IPP029N06N - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPP35CN10N - Power-Transistor
IPP320N20N3 - Power-Transistor
IPP320N20N3G - Power-Transistor
IPP339N20NM6 - 200V Power-Transistor
IPP011N03LF2S - MOSFET
IPP011N04NF2S - 40V MOSFET

Published: Aug 25, 2014 |