IPP339N20NM6 200V Power-Transistor

Infineon

Description

Public IPP339N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V .
1 Maxi.

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Datasheet Specifications

Part number: IPP339N20NM6
Manufacturer: Infineon ↗
File Size: 893.03 KB
Datasheet: IPP339N20NM6-Infineon.pdf
Description: 200V Power-Transistor

Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb‑free lead plating; RoHS compli

Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 33.9 mΩ ID 39 A Qoss 48 nC QG 15.9 nC Qrr (1000A/μs) 234 nC Part number IPP339N20NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 339N20N6 Related l

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IPP339N20NM6 200V Power-Transistor Infineon

Infineon IPP339N20NM6-like datasheet