IPP339N20NM6 Datasheet - Infineon

IPP339N20NM6 200V Power-Transistor

IPP339N20NM6 Features

* N‑channel, normal level

* Very low on‑resistance RDS(on)

* Excellent gate charge x RDS(on) product (FOM)

* Very low reverse recovery charge (Qrr)

* High avalanche energy rating

* 175°C operating temperature

* Pb‑free lead plating; RoHS compli

Datasheet Details

IPP339N20NM6

893.03 KB

200v power-transistor.

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IPP339N20NM6 IPP339N20NM6 200V Power-Transistor Infineon

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