IPP35CN10N - Power-Transistor
IPP35CN10N Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualifi
