360-o Datasheet | Specifications & PDF Download

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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AEROSEMI FEATURES • Integrated 80mΩ Power MOSFET • 2V to 24V Input Voltage • 1.2MHz Fixed Switching Frequency • Internal 4A Switch Current Limit • Adj

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Data Travo Flyback 2435521 Tampak Bawah Skema Koneksi No. Pin Fungsi 12 34 H GND 25 200 5 B+110 6 7 8 9 10 HT ABL 14 NC NC Digunakan Pada T

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HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R360FJH(FJD)(D)(L8A)E3 i

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DATA SHEET Solid State Relay OCMOS FET PS7360-1A,PS7360L-1A 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7360-1A

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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PN8360 Chipown High Precision CC/CV Primary-Side Converter General Description The PN8360 consists of a high precision CC/CV primary side controller

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DP2360 Highly Integrated Offline Current Mode PWM Power Switch FEATURES  Integrated with 650V Power MOSFET  ±1% CV Regulation  Less than 75mW Stan

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ZXLD1360 1A LED driver with internal switch Description The ZXLD1360 is a continuous mode The ADJ pin will accept either a DC voltage or a inductiv

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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3 mm (T1) LED, Diffused LR 3360, LS 3360, LO 3360, LY 3360, LG 3360, LP 3360 fBesondere Merkmale • Gehäusetyp: eingefärbtes, diffuses 3 mm (T1) Gehäu

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5 mm (T1 ¾) LED, Diffused Lead (Pb) Free Product - RoHS Compliant LS 5360, LY 5360, LG 5360 LG_LS_LY5360 abgekündigtnachOS-PD-2006-009werden durch LG_

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications 2SC5360 Unit: mm • High voltage: VCEO = 300 V • Smal

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® RT3602AC Triple Channel PWM Controller with Integrated Driver for IMVP8 Mobile CPU Core Power Supply General Description The RT3602AC is an IMVP8

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