3710S Datasheet | Specifications & PDF Download

www.DataSheet.co.kr PD -91310C IRF3710S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3710S) Low-profile through

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136,

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IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching

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Isc N-Channel MOSFET Transistor IRF3710S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching

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N N-CHANNEL MOSFET R JCS3710F MAIN CHARACTERISTICS ID 65 A VDSS 100 V Rdson（@Vgs=10V） 17.5 mΩ Qg 74 nC Package z DC/DC z D APPLICATION

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PD - 97470 AUTOMOTIVE GRADE Features O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast

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F3710S-VB F3710S-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100

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PD - 94201A l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Av

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RU3710S N-Channel Advanced Power MOSFET Features • 100V/60A RDS (ON)=14mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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