Datasheet4U Logo Datasheet4U.com

IRF3710SPBF

Power MOSFET

IRF3710SPBF Features

* .T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ]

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VD

IRF3710SPBF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710SPBF Datasheet (315.12 KB)

Preview of IRF3710SPBF PDF

Datasheet Details

Part number:

IRF3710SPBF

Manufacturer:

International Rectifier

File Size:

315.12 KB

Description:

Power mosfet.
IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.

📁 Related Datasheet

IRF3710S Power MOSFET (International Rectifier)

IRF3710S N-Channel MOSFET (INCHANGE)

IRF3710 N-Channel Power MOSFET (nELL)

IRF3710 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF3710 Power MOSFET (International Rectifier)

IRF3710L Power MOSFET (International Rectifier)

IRF3710L N-Channel MOSFET (INCHANGE)

IRF3710LPBF Power MOSFET (International Rectifier)

IRF3710PbF HEXFET Power MOSFET (International Rectifier)

IRF3710Z HEXFET Power MOSFET (International Rectifier)

TAGS

IRF3710SPBF Power MOSFET International Rectifier

Image Gallery

IRF3710SPBF Datasheet Preview Page 2 IRF3710SPBF Datasheet Preview Page 3

IRF3710SPBF Distributor