IRF3710LPBF, IRF3710SPBF Datasheet - International Rectifier

IRF3710LPBF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710LPBF Features

* .T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ]

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VD

IRF3710SPBF-InternationalRectifier.pdf