Description
IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
silicon.
Features
* . T for P-Channel
Driver Gate Drive
P. W. Period
D=
P. W. Period
[VGS=10V ]
* D. U. T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D. U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
[VD
Applications
* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio
