Datasheet4U Logo Datasheet4U.com

IRF3710LPBF Datasheet - International Rectifier

IRF3710LPBF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710LPBF Features

* .T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ]

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VD

IRF3710LPBF Datasheet (315.12 KB)

Preview of IRF3710LPBF PDF
IRF3710LPBF Datasheet Preview Page 2 IRF3710LPBF Datasheet Preview Page 3

Datasheet Details

Part number:

IRF3710LPBF

Manufacturer:

International Rectifier

File Size:

315.12 KB

Description:

Power mosfet.

📁 Related Datasheet

IRF3710L Power MOSFET (International Rectifier)

IRF3710L N-Channel MOSFET (INCHANGE)

IRF3710 N-Channel Power MOSFET (nELL)

IRF3710 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF3710 Power MOSFET (International Rectifier)

IRF3710PbF HEXFET Power MOSFET (International Rectifier)

IRF3710S Power MOSFET (International Rectifier)

IRF3710S N-Channel MOSFET (INCHANGE)

TAGS

IRF3710LPBF Power MOSFET International Rectifier

IRF3710LPBF Distributor