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IRF3710PbF

HEXFET Power MOSFET

IRF3710PbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710PbF Datasheet (218.87 KB)

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Datasheet Details

Part number:

IRF3710PbF

Manufacturer:

International Rectifier

File Size:

218.87 KB

Description:

Hexfet power mosfet.
PD - 94954D l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava.

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IRF3710PbF HEXFET Power MOSFET International Rectifier

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