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IRF3710S

Power MOSFET

IRF3710S General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710S Datasheet (303.85 KB)

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Datasheet Details

Part number:

IRF3710S

Manufacturer:

International Rectifier

File Size:

303.85 KB

Description:

Power mosfet.
IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.

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IRF3710S Power MOSFET International Rectifier

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