3DD13001H_JILINSINO Datasheet | Specifications & PDF Download

Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High sp

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NPN 3DD13001 A1 ○R 3DD13001 A1 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 400 0.25 0.8 V A W TO-92 -10℃

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissip

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Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLEC

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3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13001A IC VCEO PC(TO-92) MAIN CHARACTERISTICS 0.8A 400V 1W Package z z z z z

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13001H IC VCEO PC(TO-92) MAIN CHARACTERISTICS 0.75A 400V 1W Package z z z z z

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13001S IC VCEO PC(TO-92) MAIN CHARACTERISTICS 0.5A 400V 1W Package z z z z z

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applica

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SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.

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