3DD155 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) P

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max

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