3DD155 Description
hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 3DD155 TC=25℃ unless otherwise specified SYMBOL PARAMETER...