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3DD155 - Silicon NPN Power Transistor

General Description

DC Current Gain : hFE= 15-120@IC= 1A Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplif

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.