3DD15B Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD15B |
|---|---|
| Datasheet | 3DD15B-InchangeSemiconductor.pdf |
| File Size | 206.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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3DD1545 | NPN Transistor | Huajing Microelectronics |
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3DD1555 | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO |
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3DD1555A | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO |