3DD15D Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD15D |
|---|---|
| Datasheet | 3DD15D-INCHANGE.pdf |
| File Size | 202.12 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 3DD15 | Silicon NPN Power Transistor | Inchange Semiconductor | |
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3DD1545 | NPN Transistor | Huajing Microelectronics |
| 3DD155 | Silicon NPN Power Transistor | Inchange Semiconductor |