3DD15D Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
- Part: 3DD15D
- Manufacturer: Inchange Semiconductor (official site)
- Size: 202.12 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
3DD15 | Silicon NPN Power Transistor |
Huajing Microelectronics |
3DD1545 | NPN Transistor |
|
Inchange Semiconductor |
3DD155 | Silicon NPN Power Transistor |
JILIN SINO |
3DD1555 | CASE-RATED BIPOLAR TRANSISTOR |
|
JILIN SINO |
3DD1555A | CASE-RATED BIPOLAR TRANSISTOR |