3DD159E Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159E TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA;.