Datasheet Details
| Part number | 3DD159F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.06 KB |
| Description | NPN Transistor |
| Datasheet | 3DD159F-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159F.
| Part number | 3DD159F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.06 KB |
| Description | NPN Transistor |
| Datasheet | 3DD159F-INCHANGE.pdf |
|
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| 3DD159A | NPN Transistor |
| 3DD159B | NPN Transistor |
| 3DD159C | NPN Transistor |
| 3DD159D | NPN Transistor |
| 3DD159E | NPN Transistor |
| 3DD15D | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |