Part 3DD15
Description Silicon NPN Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 204.43 KB
Inchange Semiconductor
3DD15

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation.