Datasheet4U Logo Datasheet4U.com

3DD15A Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD15A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

3DD15A Distributor