3DD15A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD15A |
|---|---|
| Download | 3DD15A Datasheet (PDF) |
| File Size | 185.32 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Huajing Microelectronics |
3DD1545 | NPN Transistor |
JILIN SINO |
3DD1555 | CASE-RATED BIPOLAR TRANSISTOR |
JILIN SINO |
3DD1555A | CASE-RATED BIPOLAR TRANSISTOR |
JILIN SINO |
3DD1555P | CASE-RATED BIPOLAR TRANSISTOR |
| ETC Unknown Manufacturer |
3DD157 | Low-frequency silicon NPN power transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.