3DD15C - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applicati

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	3DD15C
Manufacturer	Inchange Semiconductor
File Size	184.61 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD15C Datasheet
Additional preview pages of the 3DD15C datasheet.

📁 Similar Datasheet

3DD1545 - NPN Transistor (Huajing Microelectronics)
3DD1555 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
3DD1555A - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
3DD1555P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
3DD157 - Low-frequency silicon NPN power transistor (ETC)
3DD159A - NPN Transistor (INCHANGE)
3DD159B - NPN Transistor (INCHANGE)
3DD159C - NPN Transistor (INCHANGE)
3DD159D - NPN Transistor (INCHANGE)
3DD159E - NPN Transistor (INCHANGE)

Other Datasheets by Inchange Semiconductor

3DD15 - Silicon NPN Power Transistor
3DD155 - Silicon NPN Power Transistor
3DD15A - Silicon NPN Power Transistor
3DD15B - Silicon NPN Power Transistor
3DD101A - Silicon NPN Power Transistor
3DD101B - Silicon NPN Power Transistor
3DD102 - Silicon NPN Power Transistor
3DD102A - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.

Published: Jun 18, 2016 |