3N90 Datasheet | Specifications & PDF Download

www.vishay.com RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030 x 0.030 RFLW series of thin film spiral induct

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-

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UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operati

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Silicon N-Channel Power MOSFET ○R CS13N90 AKR-G General Description： VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, i

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V

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ITD03N90A N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 900V Lead Free Package and Finish RDS(ON)(Typ.) 4.7Ω ID 3A Features: ●

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PFU3N90G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switchi

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Silicon N-Channel Power MOSFET ○R CS13N90 ANR General Description： VDSS 900 V CS13N90 ANR, the silicon N-channel Enhanced ID 13 A VDMOSFETs

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PFU3N90EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltag

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UNISONIC TECHNOLOGIES CO., LTD 3N90-E 3.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS(ON), low gate charge and o

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RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligne

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BL3N90E Power MOSFET 1．Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technol

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FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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ITU03N90A N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 900V Lead Free Package and Finish RDS(ON)(Typ.) 5Ω ID 3A Features: ● Ro

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RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligne

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Silicon N-Channel Power MOSFET ○R CS3N90 A4R General Description： CS3N90 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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