3N90 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-

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UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operati

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 900V D RDSON (MAX.) 4Ω ID 3.5A G UIS, 100% Tested S

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FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 900V D RDSON (MAX.) 4Ω ID 3.5A G UIS, 100% Tested S

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltag

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isc N-Channel MOSFET Transistor SW3N90U FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-R

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Silicon N-Channel Power MOSFET ○R CS13N90 ANR General Description： VDSS 900 V CS13N90 ANR, the silicon N-channel Enhanced ID 13 A VDMOSFETs

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Silicon N-Channel Power MOSFET CS3N90 A8 ○R General Description： CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252  High ruggedness  Low RDS(ON) (Typ 4.8Ω)@VGS=10V  L

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RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligne

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Silicon N-Channel Power MOSFET ○R CS3N90 A4R General Description： CS3N90 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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FQP3N90 September 2000 QFET FQP3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQPF3N90 September 2000 QFET FQPF3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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Silicon N-Channel Power MOSFET CS3N90 A3H ○R General Description： CS3N90 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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