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3N90 Datasheet, Features, Application

3N90 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transi.

Inchange Semiconductor

3N90 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-.
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Unisonic Technologies

3N90 - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operati.
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SemiHow

HFP3N90 - N-Channel MOSFET

HFP3N90_HFS3N90 Oct 2016 HFP3N90 / HFS3N90 900V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ve.
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CR Micro

CS3N90A3H1-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N90 A3H1-G General Description: VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is.
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CR Micro

CS13N90ANR - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS13N90 ANR General Description: VDSS 900 V CS13N90 ANR, the silicon N-channel Enhanced ID 13 A VDMOSFETs.
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CR Micro

CS13N90AKR-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS13N90 AKR-G General Description: VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, i.
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Excelliance MOS

EMD03N90E - MOSFET

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  900V  D RDSON (MAX.)  4Ω  ID  3.5A  G   UIS, 100%.
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Excelliance MOS

EMD03N90F - MOSFET

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  900V  D RDSON (MAX.)  4Ω  ID  3.5A  G   UIS, 100%.
1.0 · rating-1
SemiHow

HFS3N90 - N-Channel MOSFET

HFP3N90_HFS3N90 Oct 2016 HFP3N90 / HFS3N90 900V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ve.
1.0 · rating-1
Fairchild Semiconductor

FQP3N90 - 900V N-Channel MOSFET

FQP3N90 September 2000 QFET FQP3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.
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Inchange Semiconductor

13N90 - N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltag.
1.0 · rating-1
Huajing Microelectronics

CS3N90A3H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A3H ○R General Description: CS3N90 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
1.0 · rating-1
Huajing Microelectronics

CS3N90A4H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A4H ○R General Description: CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
1.0 · rating-1
Huajing Microelectronics

CS3N90A8 - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A8 ○R General Description: CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
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Huajing Microelectronics

CS3N90FA9H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90F A9H ○R General Description: CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-ali.
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Samsung Electronics

SSS3N90 - N-Channel Power MOSFETS

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ST Microelectronics

STP3N90 - N-Channel Enhancement Mode Power MOS Transistor

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TRinno

TMU3N90G - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM.
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TRinno

TMD3N90G - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM.
1.0 · rating-1
TRinno

TMD3N90 - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM.
1.0 · rating-1
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