CS13N90ANR Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS13N90ANR, Silicon N-Channel Power MOSFET

VDSS 900 V CS13N90 ANR, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) RDS(ON)Typ 227 0.57 W Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used

CS13N90ANR Features

* l Fast Switching l Low ON Resistance(Rdson≤0.68Ω) l Low Gate Charge (Typical Data: 87nC) l Low Reverse transfer capacitances(Typical: 3.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of inverter and welding. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa