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CS13N50A8H

Silicon N-Channel Power MOSFET

CS13N50A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

CS13N50A8H General Description

VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used .

CS13N50A8H Datasheet (357.08 KB)

Preview of CS13N50A8H PDF

Datasheet Details

Part number:

CS13N50A8H

Manufacturer:

Huajing Microelectronics

File Size:

357.08 KB

Description:

Silicon n-channel power mosfet.

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CS13N50A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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