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CS13N50A8H - Silicon N-Channel Power MOSFET

CS13N50A8H Description

Silicon N-Channel Power MOSFET CS13N50 A8H ○R General .
VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150.

CS13N50A8H Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curre

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