Part number:
CS13N50A8H
Manufacturer:
Huajing Microelectronics
File Size:
357.08 KB
Description:
Silicon n-channel power mosfet.
CS13N50A8H-HuajingMicroelectronics.pdf
Datasheet Details
VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used
CS13N50A8H Features
* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par
CS13N50A8H-HuajingMicroelectronics.pdf
Datasheet Details
CS13N50A8H
Huajing Microelectronics
357.08 KB
Silicon n-channel power mosfet.
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