CS13N50A8H Datasheet - Huajing Microelectronics

CS13N50A8H Silicon N-Channel Power MOSFET

VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used .

CS13N50A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

CS13N50A8H-HuajingMicroelectronics.pdf