Datasheet4U Logo Datasheet4U.com

CS13N50FA9D Datasheet - Huajing Microelectronics

CS13N50FA9D - Silicon N-Channel Power MOSFET

CS13N50F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization

CS13N50FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter V

CS13N50FA9D-HuajingDiscreteDevices.pdf

Preview of CS13N50FA9D PDF
CS13N50FA9D Datasheet Preview Page 2 CS13N50FA9D Datasheet Preview Page 3

Datasheet Details

Part number:

CS13N50FA9D

Manufacturer:

Huajing Microelectronics

File Size:

485.67 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags