Part number:
CS13N50FA9D
Manufacturer:
Huajing Microelectronics
File Size:
485.67 KB
Description:
Silicon n-channel power mosfet.
CS13N50FA9D-HuajingDiscreteDevices.pdf
Datasheet Details
CS13N50F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS13N50FA9D Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter V
CS13N50FA9D-HuajingDiscreteDevices.pdf
Datasheet Details
CS13N50FA9D
Huajing Microelectronics
485.67 KB
Silicon n-channel power mosfet.
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