CS13N03AE Datasheet - CR Micro

CS13N03AE Silicon N-Channel Power MOSFET

CS13N03 AE, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effic.

CS13N03AE Features

* VDSS ID RDS(ON)Typ 30 V 13 A 8.3 mΩ l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Ta= 25℃ unless otherwise specified）： Sym

CS13N03AE-CRMicro.pdf