CS13N50A8R Datasheet - Huajing Microelectronics

CS13N50A8R Silicon N-Channel Power MOSFET

CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS13N50A8R Features

* l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 13 150 0.4 l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=

CS13N50A8R-HuajingDiscreteDevices.pdf