Part number:
CS13N50A8R
Manufacturer:
Huajing Microelectronics
File Size:
265.21 KB
Description:
Silicon n-channel power mosfet.
CS13N50A8R-HuajingDiscreteDevices.pdf
Datasheet Details
CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and hig
CS13N50A8R Features
* l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 13 150 0.4 l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
CS13N50A8R-HuajingDiscreteDevices.pdf
Datasheet Details
CS13N50A8R
Huajing Microelectronics
265.21 KB
Silicon n-channel power mosfet.
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