CS13N50A8R

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS13N50A8R Features

* l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 13 150 0.4 l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=

CS13N50A8R General Description

CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS13N50A8R Datasheet (265.21 KB)

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CS13N50A8R

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Huajing Microelectronics

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265.21 KB

Description:

Silicon n-channel power mosfet.

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CS13N50A8R Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS13N50A8R Features

CS13N50A8R General Description

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