CS13N50FA9H Datasheet - Huajing Microelectronics

CS13N50FA9H Silicon N-Channel Power MOSFET

CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS13N50FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS13N50FA9H-HuajingMicroelectronics.pdf