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CS13N50FA9H

Silicon N-Channel Power MOSFET

CS13N50FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS13N50FA9H General Description

CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS13N50FA9H Datasheet (345.89 KB)

Preview of CS13N50FA9H PDF

Datasheet Details

Part number:

CS13N50FA9H

Manufacturer:

Huajing Microelectronics

File Size:

345.89 KB

Description:

Silicon n-channel power mosfet.

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CS13N50FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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