Part number:
CS13N50FA9H
Manufacturer:
Huajing Microelectronics
File Size:
345.89 KB
Description:
Silicon n-channel power mosfet.
CS13N50FA9H-HuajingMicroelectronics.pdf
Datasheet Details
CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 switching performance and enhance the avalanche energy.
The transistor can be used in various power s
CS13N50FA9H Features
* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param
CS13N50FA9H-HuajingMicroelectronics.pdf
Datasheet Details
CS13N50FA9H
Huajing Microelectronics
345.89 KB
Silicon n-channel power mosfet.
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