CS13N90AKR-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS13N90AKR-G, Silicon N-Channel Power MOSFET

VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 227 which reduce the conduction loss, improve switching RDS(ON)Typ 0.57 performance and enhance the avalanche energy.

The transistor can be used in vario

CS13N90AKR-G Features

* Fast Switching

* Low ON Resistance(Rdson≤0.68Ω)

* Low Gate Charge (Typical Data: 87nC)

* Low Reverse transfer capacitances(Typical: 3.3pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of inverter and welding. Absolute（Tc=