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CS13N50A8D

Silicon N-Channel Power MOSFET

CS13N50A8D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter V

CS13N50A8D General Description

CS13N50 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS13N50A8D Datasheet (488.79 KB)

Preview of CS13N50A8D PDF

Datasheet Details

Part number:

CS13N50A8D

Manufacturer:

Huajing Microelectronics

File Size:

488.79 KB

Description:

Silicon n-channel power mosfet.

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