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CS3N90FA9H

Silicon N-Channel Power MOSFET

CS3N90FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS3N90FA9H General Description

CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 30 4.7 enhance the avalanche energy. The transistor can be used in various power switch.

CS3N90FA9H Datasheet (624.01 KB)

Preview of CS3N90FA9H PDF

Datasheet Details

Part number:

CS3N90FA9H

Manufacturer:

Huajing Microelectronics

File Size:

624.01 KB

Description:

Silicon n-channel power mosfet.

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CS3N90FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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