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CS3N120A4R Datasheet - CR Micro

CS3N120A4R - Silicon N-Channel Power MOSFET

CS3N120 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS3N120A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications: Electric welder、Inverter. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDM

CS3N120A4R-CRMicro.pdf

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Datasheet Details

Part number:

CS3N120A4R

Manufacturer:

CR Micro

File Size:

419.62 KB

Description:

Silicon n-channel power mosfet.

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