CS3N120A4R Datasheet - CR Micro

CS3N120A4R Silicon N-Channel Power MOSFET

CS3N120 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS3N120A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications： Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM

CS3N120A4R-CRMicro.pdf